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BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 01 -- 14 August 2007 Preliminary data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL (W) 120 Gp (dB) 11 D (%) 43 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
1.3 Applications
I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLS6G3135-120 (SOT502A)
1 3 2 2 3
sym112
1
BLS6G3135S-120 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLS6G3135-120 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number
BLS6G3135S-120 -
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min -0.5 -65 Max 60 +13 7.2 +150 225 Unit V V A C C
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
2 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 C; PL = 120 W tp = 300 s; = 10 % tp = 100 s; = 20 % 0.29 0.40 K/W 0.30 0.41 K/W Typ Max Unit transient thermal impedance from junction to mounting base Symbol Parameter
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 8.3 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A Min 60 1.4 27 Typ 1.8 33 13 0.085 Max 2.3 5 450 Unit V V A A nA S
0.160
7. Application information
Table 7. Application information Mode of operation: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol PL VCC Gp IRL PL(1dB) D tr tf Parameter output power supply voltage power gain input return loss output power at 1 dB gain compression drain efficiency rise time fall time PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W Conditions Min 9.5 6 39 Typ 120 11 10 130 43 20 6 Max 32 50 50 Unit W V dB dB W % ns ns
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
3 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Typical impedance ZS 2.7 - j5.4 3.3 - j4.7 4.2 - j4.4 5.2 - j4.8 5.7 - j6.2 ZL 5.9 - j5.9 4.5 - j6.2 3.5 - j6.0 2.7 - j5.6 2.0 - j5.2
Table 8. f GHz 3.1 3.2 3.3 3.4 3.5
drain ZL gate ZS
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 s; = 10 %.
001aag823 001aag824
13 Gp (dB) 11 D Gp
50 D (%) 40
14 Gp (dB)
(1)
(2) (3)
10 9 30
7
20 6
5
10
3 3 3.2 3.4 f (GHz)
0 3.6
2 0 40 80 120 PL (W) 160
VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %; PL = 120 W.
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
Fig 2. Power gain and drain efficiency as functions of frequency; typical values
BLS6G3135-120_6G3135S-120_1
Fig 3. Power gain as a function of load power; typical values
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
4 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
50 D (%) 40
001aag825
(1) (2) (3)
160
(2)
001aag826
PL (W) 120
(1)
(3)
30 80 20
40 10
0 0 40 80 120 PL (W) 160
0 0 5 10 15 Pi (W) 20
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 300 s; = 10 %.
Fig 4. Drain efficiency as a function of load power; typical values
13 Gp (dB) 11 D Gp
001aag827
Fig 5. Load power as a function of input power; typical values
14 Gp (dB)
(1)
50 D (%) 40
001aag828
(2) (3)
10 9 30
7
20 6
5
10
3 3 3.2 3.4 f (GHz)
0 3.6
2 0 40 80 120 PL (W) 160
VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %; PL = 120 W.
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %.
Fig 6. Power gain and drain efficiency as functions of frequency; typical values
Fig 7. Power gain as a function of load power; typical values
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
5 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
50 D (%) 40
001aag829
(1) (2)
160 PL (W) 120
(2)
001aag830
(3) (1)
(3)
30 80 20
40 10
0 0 40 80 120 PL (W) 160
0 0 5 10 15 Pi (W) 20
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %.
(1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VDS = 32 V; IDq = 100 mA; tp = 100 s; = 20 %.
Fig 8. Drain efficiency as a function of load power; typical values
Fig 9. Load power as a function of input power; typical values
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
6 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 10. Package outline SOT502A
BLS6G3135-120_6G3135S-120_1 (c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
7 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 11. Package outline SOT502B
BLS6G3135-120_6G3135S-120_1 (c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
8 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
9. Abbreviations
Table 9. Acronym LDMOS LDMOST RF S-Band VSWR Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio
10. Revision history
Table 10. Revision history Release date 20070814 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLS6G3135-120_6G3135S-120_1
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
9 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLS6G3135-120_6G3135S-120_1
(c) NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 01 -- 14 August 2007
10 of 11
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
13. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 August 2007 Document identifier: BLS6G3135-120_6G3135S-120_1

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